Atomic Scale Characterization of Photovoltaic Devices
Sponsored by and in collaboration with NREL
Atomic scale characterization of photovoltaics using a combination of atom probe tomography and electron microscopy / spectroscopy allows us to determine the elemental causes of efficiency limiters. Our group currently has focus areas in multicrystalline Si, epitaxial Si, amorphous Si, CdTe, and III-V heterostructures.
Technique developments include cross-correlative EBIC and cathodoluminescence along with APT for a direct correlation between atomic scale defect structure and its electrical properties.
Adam recently showed that measurement of the defect chemistry at interfaces and grain boundaries in CIGS allows us to derive the electrical properties of interfaces DIRECTLY from APT data.
Atomic Scale Characterization of Oxides
Atomic scale understanding of interfaces in oxides, especially those used for electronic devices, enables a direct correlation between atomic structure and electronic or ionic transport. Internal interfaces can include grain boundaries, epitaxial interfaces for 2D electron gases, and metal / dielectric interfaces. Publication links: CeO2, BCZY, CIGS
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